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CHARACTERIZATION OF GaN LAYERS GROWN ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXY
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| dc.contributor.author | Ajaz-un-Nabi, Muhammad | |
| dc.date.accessioned | 2018-02-19T04:01:21Z | |
| dc.date.accessioned | 2020-04-14T23:27:10Z | |
| dc.date.available | 2020-04-14T23:27:10Z | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | http://142.54.178.187:9060/xmlui/handle/123456789/10329 | |
| dc.description.abstract | N/A | en_US |
| dc.description.sponsorship | Higher Education Commission, Pakistan | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | The Islamia University of Bahawalpur, Pakistan | en_US |
| dc.subject | Natural Sciences | en_US |
| dc.title | CHARACTERIZATION OF GaN LAYERS GROWN ON SILICON SUBSTRATE BY MOLECULAR BEAM EPITAXY | en_US |
| dc.type | Thesis | en_US |
