dc.contributor.author | Ali, Syed Mansoor | |
dc.contributor.author | Hussain, Syed Tajammul | |
dc.contributor.author | Bakar, Shahzad Abu | |
dc.contributor.author | Muhammad, Jan | |
dc.contributor.author | Naeem ur Rehman | |
dc.date.accessioned | 2019-11-20T09:54:38Z | |
dc.date.available | 2019-11-20T09:54:38Z | |
dc.date.issued | 2013-01-01 | |
dc.identifier.issn | 439 012013 | |
dc.identifier.uri | http://142.54.178.187:9060/xmlui/handle/123456789/1576 | |
dc.description.abstract | In order to achieve high conductivity and transmittance of transparent conducting oxide (TCO), we attempted to fabricate Mg doped SnO2 (MgxSn1-xO2) thin films and characterized them for their structural and optical properties. The MgxSn1-xO2 thin films have been deposited on glass substrate by using aero-sole assisted chemical vapor deposition (AACVD). The molar concentration of Mg concentration was changed from 0 to 8%. The confirmation of tetragonal structure and particle size (32 to 87nm) has been calculated of thin films by XRD. The surface roughness is decreased with the increase of the dopant concentration, which has been investigated by atomic force microscopy (AFM). The optical transmission has increased from 54 to 78% and the band gape of pure SnO2 has been found to be in the range of 3.76eV and it is shifted to 3.69eV for 6Wt % Mg doping and then increase on further increasing the Mg doping. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Institute of Physics | en_US |
dc.subject | Natural Science | en_US |
dc.subject | Mg Doped SnO2 | en_US |
dc.subject | Thin Films | en_US |
dc.subject | AACVD | en_US |
dc.subject | RBS | en_US |
dc.subject | XRD | en_US |
dc.title | Effect of doping on the Structural and OpticalProperties of SnO2 Thin Films fabricated byAerosol Assisted Chemical Vapor Deposition | en_US |
dc.type | Article | en_US |