dc.contributor.author |
Shah, Aqeel Ahmed |
|
dc.contributor.author |
Guo, Zhongyi |
|
dc.contributor.author |
Xiao, Yanjun |
|
dc.contributor.author |
Jee, Sangwon |
|
dc.contributor.author |
Moiz, S. A. |
|
dc.contributor.author |
Lee, Jung-Ho |
|
dc.contributor.author |
Shah, Qurban A. |
|
dc.date.accessioned |
2019-11-22T10:36:35Z |
|
dc.date.available |
2019-11-22T10:36:35Z |
|
dc.date.issued |
2010-10-18 |
|
dc.identifier.isbn |
978-1-4244-8058-6 |
|
dc.identifier.uri |
http://142.54.178.187:9060/xmlui/handle/123456789/1759 |
|
dc.description.abstract |
The optical characteristics of the fabricated Si 1-x Ge x nanowires (SGNWs) with different compositions have been researched. Firstly, the SGNWs have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst under the temperature of 1000°C, and the length and the compositions of the SGNWs could be tuned by controlling the growth time and the mole ratios of SiCl 4 :GeCl 4 respectively. Secondly, the total reflection and the transmission of the fabricated SGNWs have been measured by the Varian Cary 5000 UV/VIS/NIR spectrophotometer in a wavelength range of 300-2000 nm for explaining the color changes of the samples. At last, we give some discussions and the explanations about the experimental results. |
en_US |
dc.language.iso |
en_US |
en_US |
dc.publisher |
IEEE 2010 6th International Conference on Emerging Technologies (ICET) |
en_US |
dc.subject |
Engineering and Technology |
en_US |
dc.subject |
VLS |
en_US |
dc.subject |
Optical properties |
en_US |
dc.subject |
Growth rate |
en_US |
dc.title |
Optical property of the fabricated Si1−xGex nanowires |
en_US |
dc.type |
Proceedings |
en_US |