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Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications

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dc.contributor.author Murtaza, G.
dc.contributor.author Ahmad, Iftikhar
dc.contributor.author Maqbool, M.
dc.contributor.author Aliabad, H. A. Rahnamaye
dc.contributor.author Afaq, A.
dc.date.accessioned 2020-01-01T07:03:43Z
dc.date.available 2020-01-01T07:03:43Z
dc.date.issued 201-01-01
dc.identifier.issn 28 117803
dc.identifier.uri http://142.54.178.187:9060/xmlui/handle/123456789/2066
dc.description.abstract Chemical bonding as well as structural, electronic and optical properties of CsPbF3 are calculated using the highly accurate full potential linearized augmented plane-wave method within the framework of density functional theory (DFT). The calculated lattice constant is found to be in good agreement with the experimental results. The electron density plots reveal strong ionic bonding in Cs-F and strong covalent bonding in Pb-F. The calculations show that the material is a direct and wide bandgap semiconductor with a fundamental gap at the R-symmetry point. Optical properties such as the real and imaginary parts of the dielectric function, refractive index, extinction coefficient, reflectivity, optical conductivity and absorption coefficient are also calculated. Based on the calculated wide and direct bandgap, as well as other optical properties of the compound, it is predicted that CsPbF3 is suitable for optoelectronic devices and anti-reflecting coatings. en_US
dc.language.iso en_US en_US
dc.publisher Chinese Physics Letters en_US
dc.subject Natural Science en_US
dc.subject Structural and Optoelectronic Properties en_US
dc.subject Cubic CsPbF3 en_US
dc.subject Novel Applications en_US
dc.title Structural and Optoelectronic Properties of Cubic CsPbF3 for Novel Applications en_US
dc.type Article en_US


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