Abstract:
Single-phase Zn0.95Co0.05O and Zn0.90Co0.05Al0.05O samples were prepared by a novel combustion method. X-ray diffraction studies exhibit the pure phase wurtzite structure of doped ZnO. Energy dispersive x-ray analysis confirms the incorporation of dopants into the host material. Scanning electron microscopy shows the ordered morphology in both of the samples. Temperature-dependent resistivity analysis describes the expected semiconducting behavior that is similar to the parent ZnO materials. Room-temperature magnetic measurements reveal the absence of ferromagnetism in Co-doped ZnO, while the Co and Al co-doped sample displays apparent room-temperature ferromagnetic behavior. The decrease of resistivity and presence of ferromagnetic behavior in Al-doped ZnCoO system corroborate the significant role of free carriers.
