Abstract:
The present research is motivated by the remarkable mechanical, thermal and
electronic properties of titanium based nitride thin films that have many applications ranging
from coatings on cutting tools to diffusion barrier microelectronic applications. This work
reports the first successful attempt to grow titanium based nitride thin films, specifically
TiAlN, nc- TiN/ a-Si 3 N 4 , nc- (Ti, Al) N/ a-Si 3 N 4 and Ti-Si-N using plasma focus device. The
synthesize of these films using different deposition techniques have been reported earlier but
the use of plasma focus technique is one of the prospective hybrid deposition method which is
not only economical, simple, efficient but also provide high deposition rate and good adhesion
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in less time compared to other available thin film synthesize techniques. The results of these
experiments show the successful growth of titanium based nitride thin films using plasma
focus device of energy 2.3 kJ. The following four types of different experiments were
performed:
In the first experiment, the sputtered titanium ions and energetic nitrogen ions
emitted from Mather-Type plasma focus device were used to synthesize nanocrystalline
TiN/amorphous-Si 3 N 4 thin films. The crystallite size analysis showed strong dependence on
the number of focus shots. The crystallinity of TiN thin films wasfound to increase with
increasing the number of focus shots. SEM results showed net like structure ofthe film
deposited for 15 numbers of shots, which are in the form of elongated grains of Si 3 N 4
embedded in TiN crystals. The average surface roughness calculated from AFM images
indicated that the average surface roughness increased for films deposited with increased
number of focus shots.
In the second experiment, a plasma focus device was used to prepare thin films of
nc-(Ti,Al)N/a-Si 3 N 4 at room temperature. The plasma focus device, fitted with copper anode
encapsulated with Ti 0.5 Al 0.5 anode, operated with nitrogen as the filling gas was used. Films
were deposited with various number of focus shots, at 90 mm from top of the anode and at
zero angular position with respect to anode axis. XRD patterns showed the growth of
polycrystalline (Ti, Al) N thin films with orientations in the (111), (200), (220) and (311)
crystallographic planes. Behavior of lattice constant, grain size and film roughness of
xvideposited film as a function of variation in number of focus shots was discussed. SEM
micrographs of film deposited with 15 number of focus shots exhibited well-developed net
like structure of nc-(Ti,Al)N/a-Si 3 N 4 and possibly nc-(Ti,Al)N/a-Si 3 N 4 /a-AlN or nc-TiN/a-
Si 3 N 4 /a-AlN. Surface Roughness ranging 64 nm to 89 nm was also observed.
In the third experiment, TiAlN coatings were synthesized by a dense plasma focus
deposition system. The effect of focus shots on the crystallography, microstructure, surface
morphology, roughness and hardness was investigated. The X-ray diffraction (XRD) data
showed TiAlN coatings crystallized in the cubic NaCl B1 structure with orientations in the
(111), (200), (220) and (311) crystallographic planes.SEM micrographs showed dense and
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uniformly spread film with fine-grained morphology with hardly any void. Grain size and
roughness were found to decrease, whereas thickness and hardness were found to increase,
with increasing focus shots.
In the fourth and the last experiment, a plasma focus device was used to prepare
thin films of Ti-Si-N. XRD patterns showed the growth of polycrystalline TiN thin films. The
results revealed that the grain size was correlated to the amount of silicon added. SEM results
showed Ti–Si–N film exhibited a denser and amorphous compact structure almost without
obvious defects due to addition of Si content in TiN structure. The surface roughness of
synthesized thin films was much smoother compared to Plasma focus deposited thin films
reported previously, the average surface roughness ranged from 0.23 nm to 9.39 nm.